patent aspect and more

semiconductor devices H01L — 53.2%;
coatings C23C — 22.5%;
reduction of greenhouse gas emissions Y02E — 14.3%;
protection of nature in various processes, incl. biological treatment Y02P – 14%;
electrography; electrophotography; magnetography G03G – 12.9%;
non-metallic elements; their connections C01B – 4.8%;
technical devices Y10S — 4.5%;
gas-discharge and vacuum electronic devices H01J – 4.2%;
printed circuits; housings or parts of electrical devices H10K — 3.3%;
optical devices G02F – 3.1%.

The leaders are patents devoted to various electronic devices in general, with semiconductor devices by a huge margin (H01L); examples are US20210202462A1 And US11670577B2.

So what? in Russia?

In the FIPS database there are 449 Russian patents for inventions for “silane”, of which only 136 are active.

According to the subclass “semiconductor devices” H01L» 5 patents can be found. Let's list them all:

No.2614080 — “Passivation of the surface of silicon wafers by magnetron sputtering” (use at least one chemical reagent selected from the group consisting of silane (SiH4), Si2H6, Si2H4, SiF4, Si2F6 and other compounds) and No.2632267 — “Structure of a photoconverter based on crystalline silicon and its production line” (magnetron sputtering of a silicon target in an atmosphere of silane and argon) from LLC Scientific and Technical Center for Thin-Film Technologies in Energy at the Physicotechnical Institute. A.F. Joffe.”

No.2754808 — “Flow Cell Module and Method for Preparation Thereof” (first functionalized molecule attached to first silane or silane derivative) from Illumina, Inc. (US) and Illumina Cambridge Limited (GB).

No.2764040 — “Growing epitaxial 3C-SiC on single-crystalline silicon” (silicon precursor contains silane or silane chloride) from Ze University of Warwick (GB).

No.2805132 — “Method of manufacturing a semiconductor device” (in a gaseous environment SiH4-CO2-HCI-H2) from the Chechen State University named after. A.A. Kadyrov.

That is, out of 5 patents, 2 belong to foreign organizations.

There are only 4 valid patents of the Russian Federation for utility models, for example, No.181920 “Immunochip for treponema-specific serological diagnosis of syphilis.” At the same time, in the subclass “semiconductor devices” H01L» only one: No.196513 “High-density electronic module high-density electronic module” (silane copolymer) from MIREA.

One computer program – No.2022684133 “Parameterizer of the kinetic block of radical polymerization based on artificial intelligence” from YOSYA LLC.

There are no databases.

There are no integrated circuit topologies.

Conclusion

Over the years, monosilane has remained an important component in a variety of industries, including the semiconductor and solar cell industries. However, its use requires strict adherence to safety measures due to its high toxicity and pyrophoricity. This gas continues to play an important role in modern technology and its use will continue into the future.

The monosilane market was $1.3 billion in 2023, according to research until 2030, the global market will grow at a rate of 7.7% per year. The shares of the EU, North America and the Asia-Pacific region are approximately equal and will change little.

Russia is a deep outsider when it comes to electronic silane. Semiconductor patents can be counted on one hand. And this is unfortunate.

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