Dianitrogen Oxide for Semiconductors: Patent Analysis
semiconductor devices H01L — 69.4%;
coatings C23C – 14.2%;
electronic storage devices H10B – 11.7%;
organic electrical solid state devices H10K – 5.7%;
optical devices G02F – 5.4%;
gas-discharge and vacuum electronic devices and gas-discharge lighting lamps H01J – 5.3%.
As you can see, semiconductors significantly dominate other topics.
So what? in Russia?
There are zero (!) documents in the FIPS database for “nitrous oxide electronics” and “nitrous oxide semiconductors”. There are 10 Russian patents for “nitrous oxide silicon”, of which only 4 in electronics:
Method for forming silicon dioxide films (1996) No.1820782 from the Research and Production Association Integral.
Method for producing a silicon dioxide layer (2015) No.2568334 LLC “SibIS” (Novosibirsk).
Method for obtaining dielectric structures — indium arsenide (2000) No. 1604097 And Method for producing silicon oxynitride layers (2000) No. 1630570 from the Institute of Semiconductor Physics of the Siberian Branch of the Academy of Sciences.
There are no Russian patents for utility models in our field.
There are no computer programs, databases or integrated circuit topologies.
Note that on nitrous oxide 285 patents for inventions of the Russian Federation, mainly food products, pesticides for grain and tobacco, breathing mixtures, catalysts for the production of nitrous oxide, organic synthesis, fuel additives for engines, including internal combustion and jet engines. On dinitrogen oxide 5 patents that have nothing to do with electronics.
Conclusion
In Russia, there has been limited research work on nitrous oxide in electronics since at least the 1990s. Several RAS Institutes, universities and specialized enterprises were involved. The patent situation in the open field is extremely deplorable.
This contrasts sharply with international experience, in particular with the same Japanese patents.
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